Nitronex - EEM

Recent Articles for Nitronex:

Nitronex awarded phase I SBIR from NASA to research X- and Ka- band GaN power amplifiers
DURHAM, NC (April 25, 2012) - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based . . .

GaN MMIC enables tiny 5-W PA solution
Offered as the smallest broadband 5-W PA solution, the NPA1003 GaN PA MMIC features a 4 x 4-mm thermally . . .

GaN-on-Si transistor supports 5-GHz apps
The NPTB00004 RF power transistor now offers expanded performance data for the 28-V, 5-W class high-electron-mobility transistor (HEMT) to . . .

Power transistor covers 2.5-, 3.5-GHz apps
The NPT1004 gallium nitride (GaN) high-electron-mobility transistor (HEMT) delivers 45 W at 28 V for high-peak-to-average ratio and pulsed . . .

Using GaN power amplifiers
Challenged with the demand to engineer higher-performing, more-efficient, and lower-cost systems in a shorter time-to-market, many RF and microwave . . .