Inventory Search | Manufacturers | Products | Distributors | Product Information Pages
Home | Sign In | Register
Welcome Ad

Discrete Semiconductors

The discrete semiconductors section includes distinct circuit components such as, transistors, diodes, rectifiers, thyristors, triacs, SCRs, etc.
DIACs are a Thyristor without a gate electrode. They are typically used for triggering both Thyristors and TRIACs - a bidirectional member of the Thyristor family.
A Diode Detector is one or more semiconductor or electron-tube diode used to provide a rectified output that has an average value proportional to the original modulation.
Diodes, Avalanche (54 Companies)
An Avalanche Diode is a silicon diode that has a high ratio of reverse to forward resistance until Avalanche breakdown occurs. After breakdown the voltage drop across the diode is essentially constant and is independent of the current.
Diodes, Chip (43 Companies)
An electric component that conducts current in only one direction. Diodes are made from semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators/demodulators.
Constant current diode (CLD) is actually a JFET with the gate shorted to the source functioning like a two-terminal current limiter or current source. They allow a current through them to rise to a certain value, and then level off at a specific value.
Diodes, Gunn (5 Companies)
A Gunn Diode has a region of negative differential resistance with two heavily N-doped terminals and a thin layer of lightly doped material in between. It is used in high-frequency electronics.
The High Voltage Diode (Rectifier) works along with the high-voltage capacitor to effectively double the already-high voltage (about 3000 - 5000 volts DC), that is provided by the power transformer.
Diodes, Infrared (53 Companies)
An Infrared-Emitting Diode is a device with a semiconductor junction in which infrared radiant flux is non-thermally produced when a current flows as a result of applied voltage. In a forward biased junction, n electrons are injected into the p region.
A PIN Diode is a diode with a wide, lightly doped 'near' intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts.
Diodes, Power (57 Companies)
A two-terminal semiconductor device that allows current to flow through it in one direction. With the proper voltage polarity across the device, it will act as a conductor. When the voltage polarity is reversed, the device will act as a non-conductor.
Diodes, Schottky (81 Companies)
Feature a low forward voltage drop and a very fast switching action. Diodes found in switch-mode power converters, discharge protection circuitry, logic circuitry, HF applications with mixers and detectors, and general circuit design, etc.
Diodes, Silicon (89 Companies)
Silicon Diode also called silicon detector is a crystal detector used for rectifying or detecting uhf and shf signals. It consists of a metal contact held against a piece of silicon in a particular crystalline state.
Diodes, Switching (60 Companies)
General form of diodes which have a high resistance (corresponding to an open switch) below a specified applied voltage, but changes suddenly to a low resistance (closed switch) above that voltage.
Diodes, Tunnel (27 Companies)
A Tunnel Diode or Esaki Diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave frequency region, by using quantum mechanical effects.
Diodes, Varactor (21 Companies)
A Varactor Diode is a type of diode which has a variable capacitance that is a function of the voltage impressed on its terminals.
Used mainly to provide a voltage reference, voltage regulation, voltage limiting, over-voltage protection, etc.
A voltage multiplier which rectifies each half cycle of the applied alternating voltage separately, and then adds the two rectified voltages to produce a direct voltage having approximately twice the peak amplitude of the applied alternating voltage.
A Phototransistor is a bipolar transistor encased in a transparent case so that light can reach the base-collector junction. The electrons that are generated by photons are injected into the base. This current is amplified by the transistor operation.
A diode bridge or bridge rectifier is an arrangement of four diodes in a bridge configuration. It converts AC input into DC output. A bridge rectifier provides full-wave rectification from a two-wire AC input and has two diode drops rather than one.
High Voltage Rectifier is a general term used for rectifiers with peak reverse voltages above 500 volts.
Rectifiers, Power (48 Companies)
Power Rectifiers are electrical devices that convert alternating current (AC) to direct current (DC).
Rectifiers, Schottky (43 Companies)
A Schottky Rectifier is a high-speed rectifier that makes use of the rectification effect of a metal-to-silicon barrier. Low forward-voltage characteristics provide high rectification efficiency, while forward conduction enhances switching speed.
Rectifiers, Selenium (7 Companies)
A metallic rectifier with a thin layer of selenium deposited on one side of an aluminum plate and a highly conductive metal over it, allowing electrons to flow freely from the coating to the selenium than in the opposite direction providing rectification
Rectifiers, Semiconductor (49 Companies)
A Semiconductor Rectifier consists of one or more disks of metal under pressure-contact with semiconductor coatings or layers, such as a copper oxide, selenium, or silicon rectifier (contact rectifier).
Rectifiers, Silicon (58 Companies)
A Silicon Rectifier has one or more silicon cells or cell assemblies which consist of a positive and negative electrode that conducts current effectively in one direction, with lower forward voltage drop and higher reliability than Selenium Rectifiers
Rectifiers, Ultrafast (48 Companies)
The Ultrafast Rectifier diode changes the AC Voltage coming from the secondary transformer to unregulated pulsating DC. Since the AC is unregulated, the resultant pulsating DC is also unregulated and will vary in amplitude as the power line varies.
A circuit that holds an output voltage at a predetermined value or causes it to vary according to a predetermined plan, regardless of normal input-voltage changes or changes in the load impedance.
SIDAC (Silicon Diode for Alternating Current) is a bi-directional thyristor diode, technically specified as a bilateral voltage triggered switch. Its operation is similar to a DIAC with a higher breakover voltage and current handling capacity than DIACs.
Thyristors and SCRs are solid state devices that contain four layers of alternating N and P-type material. They act as a switch, when their gate receives a current pulse, and continue to conduct for as long as they are forward biased.
Transistor Arrays are used for general purpose applications, function generation and low-level, low-noise amplifiers. They include two or more transistors on a common substrate to ensure close parameter matching and thermal tracking.
A Bipolar Transistor uses both negative and positive charge carriers. It is the choice for analog circuits, both integrated and discrete.
Transistors, Chip (27 Companies)
A Transistor Chip is a very small unencapsulated transistor element used in microcircuits.
Transistors, Darlington (42 Companies)
A semiconductor which combines two bipolar transistors in a single device. The current amplified by the first is amplified further by the second. This gives a high current gain and takes less space than two discrete transistors in the same configuration.
The field-effect transistor (FET) is a type of transistor that relies on an electric field to control the shape and hence the conductivity of a 'channel' in a semiconductor material.
The IGBT is a high efficiency, fast switching, three-terminal power semiconductor device. It is designed to rapidly turn on and off. Amplifiers that use it often synthesize complex waveforms with pulse width modulation and low-pass filters.
GaAs Transistors are active semiconductor devices made of Gallium Arsenide compound displaying exceptional carrier mobility with three or more electrodes, the emitter, base and collector. Used in high-frequency amplifier circuits and microwave RFs.
Transistors, Power (64 Companies)
A Power Transistor is a transistor capable of handling high current and power.
Bipolar Junction Transistor (BJT) is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar Transistors are named because their operation involves both electrons and holes.
Transistors, Power, FET (45 Companies)
Field-Effect Transistor, (FET) is a device in which the resistance between two terminals, the source and drain, depends on a field produced by a voltage applied to the third terminal, the gate.
Commonly used low-voltage transistors to handle high power. Have large current carrying capacity, off-state voltage blocking capability, with low on-state voltage drop. Found in power supplies, DC to DC converters, and low voltage motor control circuitry.
A mainstay in wireless communications, RF Transistors are active semiconductor devices designed to handle high-power, GHz frequency signals in devices such as stereo amplifiers, radio transmitters, and television monitors
Transistors, Silicon (53 Companies)
A transistor in which silicon is used as the semiconducting material.
Transistors, Switching (37 Companies)
A switching transistor is a three-terminal device with one terminal controlling the electrical impedance between the other two. Transistor switching circuits include inverters, converters, switching voltage regulators, and relay and solenoid drivers.
Transistors, Unijunction (9 Companies)
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only one junction. The UJT has three terminals: an emitter (E) and two bases (B1 and B2)
An electronic component approximately equivalent to two silicon-controlled rectifiers (SCRs/thyristors) joined in inverse parallel connected at their gates, containing a bidirectional electronic switch which can conduct current in either direction.
eeTechBriefs – 15-Minute on-demand multimedia web casts covering the latest product developments.

Bourns® ESD Protection Products

Bourns ESD Protection products provide new, high density integrated passive & active component technology, enabling designers to achieve reductions in total system costs and enhanced performance gains.

Join Ian Doyle from Bourns for an 12 minute Webcast discussing:

- Available ESD protection products
- Target applications
- ESD requirements & parameters
- ESD protection performance capabilities

In less than 12 minutes, you’ll gain an understanding of how ESD transients are modeled and how to select ESD protection products that will meet your specific application requirements.


Application Reference Materials – Free Literature Search - App Notes, Design Kits, Eval Boards, Reference Designs, and more. Submit a request for Literature.

Make your own high voltage opto-coupler! Manufactured by VMI, the opto-diode features high voltage, high gain, and high isolation. The opto-diode is specially designed for use as a high voltage opto-coupler. The opto-diode features

  • Configurable as an opto-coupler
  • 10kVrwm
  • .51 Gain (typical)
  • Optically clear encapsulation

Voltage Multipliers Inc.

559-651-1402
kspano@voltagemultipliers.com

  • The 3D3600- and 3D7600-series of precision pulse generators offer a wide range of pulse width adjustment in space-saving SMD packages.
  • Resolution options are 8, 12 or 22 bits, and supply voltage options are 3.3V or 5V. Pulse width resolution ranges from 250ps to 800us.
  • Devices find use in a wide array of applications, including DC-DC converters, PWM encoding, motion control, automated test equipment and medical equipment.


Data Delay Devices, Inc.

973-773-2299
Clifton, NJ 07013

Central Semiconductor Corp. manufacturers bridge rectifiers designed to meet a broad range of applications including solid state lighting requirements. Devices include:

  • World's First 5A, 40V Schottky Bridge in the SM DIP case.
  • 40 to 1000V, 0.14 to 5A Bridge Rectifiers - General Purpose, Fast Recovery, Ultra Fast Recovery, and Schottky.
  • Space saving SMD packages: SOT-363, SOT-143, HDDIP, and SM DIP.

Central Semiconductors

631-435-1110
Hauppauge, NY 11788

The latest information on AKM mixed-signal IC's for audio, video, and communications applications.

  • Audio ADC's, DAC?s, CODEC's
  • S/PDIF
  • Rx/Tx, Sample Rate Converters
  • Audio DSP's Clock Generators
  • Hall Effect Sensors and IC's
  • NTSC/PAL Encoders and Decoders
  • Class-D Amps for Portable Applications
  • USB Audio Solutions

AKM Semiconductor

888-AKM-SEMI (256-7364)
San Jose, CA 95110
MARKETPLACE
WHITEPAPERS

International Resources
Electronic Products China | SemiApps China | Application Reference Materials China | eeTechBrief China | 21Ic

EEM FAQ | About EEM | Contact Us | Privacy Policy | Media Kit | Add/Update Your Listing | Suggest A Product Category | Newsletters | Home

Copyright 2010 Hearst Business Media